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Dielectric strength refers to the ability of dielectric materials to withstand the action of high intensity electric field without Electrical breakdown, usually expressed in volts per mil (V/mil) or volts per centimeter (V/cm)

When the external electric field strength reaches a certain critical value, the electrons in the material crystal lattice overcome the binding of the charge recovery force and appear field electron emission, generating enough free electrons to collide with each other, leading to the Avalanche effect, which leads to the sudden breakdown current breakdown of the medium, making it ineffective. In addition, there is another mode of medium failure, the heat generated under high voltage load will reduce the resistivity of the dielectric material to a certain extent, If extended to this extent for a sufficient period of time, leakage current will be generated at the weakest part of the medium. This mode is closely related to temperature, and the strength of the medium decreases with increasing temperature

The intrinsic dielectric strength of any insulator will decrease due to the presence of physical defects in the material microstructure, and like insulation resistance, the dielectric strength is also closely related to geometric size. Due to the increase in material volume, the probability of random defects occurring increases, so the dielectric strength is inversely proportional to the thickness of the dielectric layer. Similarly, the dielectric strength is inversely proportional toChip capacitorThe number of internal electrode layers and their physical dimensions. Based on the above considerations, the placement is carried outCapacitorWhen designing margin, it is necessary to ensure that breakdown failure does not occur during use and during withstand voltage testing (usually 2.5 times its working voltage)



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